SeriesG3R™

PackageTube

FET TypeN-Channel

TechnologySiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)1200 V

Current - Continuous Drain (Id) @ 25°C71A (Tc)

Drive Voltage (Max Rds On, Min Rds On)15V

Rds On (Max) @ Id, Vgs48mOhm @ 35A, 15V

Vgs(th) (Max) @ Id2.69V @ 10mA

Gate Charge (Qg) (Max) @ Vgs106 nC @ 15 V

Vgs (Max)±15V

Input Capacitance (Ciss) (Max) @ Vds2929 pF @ 800 V

FET Feature-

Power Dissipation (Max)333W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4

Package / CaseTO-247-4