Series-

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FET Type2 N-Channel (Dual) Asymmetrical

FET FeatureStandard

Drain to Source Voltage (Vdss)25V

Current - Continuous Drain (Id) @ 25°C13A (Ta), 35A (Tc), 26A (Ta), 88A (Tc)

Rds On (Max) @ Id, Vgs7mOhm @ 12A, 4.5V, 2.2mOhm @ 23A, 4.5V

Vgs(th) (Max) @ Id2.2V @ 250µA, 2.2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs8nC, 25nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds1075pF @ 13V, 3456pF @ 13V

Power - Max800mW (Ta), 900mW (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Package / Case8-PowerWDFN

Supplier Device PackagePowerclip-33