SeriesOptiMOS™
PackageBulk
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.3A
Rds On (Max) @ Id, Vgs57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs1.7nC @ 2.5V
Input Capacitance (Ciss) (Max) @ Vds259pF @ 10V
Power - Max500mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackagePG-TSOP-6-6