Package：4SOT-227

Channel Mode：Enhancement

Maximum Drain Source Voltage：900 V

Maximum Continuous Drain Current：33 A

RDS-on：120@10V mOhm

Maximum Gate Source Voltage：±20 V

Typical Turn-On Delay Time：70 ns

Typical Rise Time：20 ns

Typical Turn-Off Delay Time：400 ns

Typical Fall Time：25 ns

Operating Temperature：-40 to 150 °C

Mounting：Screw

Standard Package：Bulk

FET Feature：Super Junction

Packaging：Bulk

Mounting Type：Chassis Mount

Vgs(th) (Max) @ Id：3.5V @ 3mA

Drain to Source Voltage (Vdss)：900V

Supplier Device Package：SOT-227

Rds On (Max) @ Id, Vgs：120 mOhm @ 26A, 10V

FET Type：MOSFET N-Channel, Metal Oxide

Power - Max：290W

Package / Case：SOT-227-4, miniBLOC

Input Capacitance (Ciss) @ Vds：6.8nF @ 100V

Current - Continuous Drain (Id) @ 25°C：33A (Tc)

Gate Charge (Qg) @ Vgs：270nC @ 10V

rohs：Lead free / RoHS Compliant