| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Am2 | TPS1100DR | Texas Instruments | FET - 单 - 分立半导体产品 | 2500+:￥4.31+:￥9.8601
10+:￥8.78
25+:￥7.88
50+:￥7.31
100+:￥6.9
250+:￥5.8599
500+:￥5.21
750+:￥5.1999
1000+:￥4.452500+:￥4.791+:￥5.08 |
Avnet Express | TPS1100DR | Texas Instruments | PMOS DISTRIBUTION SWITCH | 2,500 : $0.75
|
ChipOneStop | TPS1100DR | Texas Instruments | FET - 单 - 分立半导体产品 | 2500+:￥4.31+:￥9.8601
10+:￥8.78
25+:￥7.88
50+:￥7.31
100+:￥6.9
250+:￥5.8599
500+:￥5.21
750+:￥5.1999
1000+:￥4.452500+:￥4.79 |
Digi-Key 得捷电子 | TPS1100DR | Texas Instruments | MOSFET P-CH 15V 1.6A 8SOIC | $0.77154 |
Digi-Key 得捷电子 | TPS1100DR | Texas Instruments | MOSFET P-CH 15V 1.6A 8SOIC | $0.68000 |
Digi-Key 得捷电子 | TPS1100DR | Texas Instruments | FET - 单 - 分立半导体产品 | 2500+:￥4.3 |
Digi-Key 得捷电子 | TPS1100DR | Texas Instruments | MOSFET P-CH 15V 1.6A 8-SOIC | 2,500 : $0.59125
|
Mouser 贸泽电子 | TPS1100DR | Texas Instruments | MOSFET Single P-Ch Enh-Mode MOSFET | 1:¥11.6842
10:¥9.9101
100:¥7.6388
500:¥6.7461
2,500:¥4.7234
10,000:查看
|
Mouser 贸泽电子 | TPS1100DR | Texas Instruments | FET - 单 - 分立半导体产品 | 2500+:￥4.31+:￥9.8601
10+:￥8.78
25+:￥7.88
50+:￥7.31
100+:￥6.9
250+:￥5.8599
500+:￥5.21
750+:￥5.1999
1000+:￥4.45 |
Newark element14 | TPS1100DRG4 | Texas Instruments | MOSFET, -15V, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.6A; Drain Source Voltage Vds:-15V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.25V; No. of Pins:8 ;RoHS Compliant: Yes | 价格未公开 |
Rochester | TPS1100DR | Texas Instruments | FET - 单 - 分立半导体产品 | 2500+:￥4.31+:￥9.8601
10+:￥8.78
25+:￥7.88
50+:￥7.31
100+:￥6.9
250+:￥5.8599
500+:￥5.21
750+:￥5.1999
1000+:￥4.452500+:￥4.791+:￥5.081+:￥5.251+:￥4.39
25+:￥4.3499
50+:￥4.31
100+:￥4.27
300+:￥4.25
500+:￥4.23
1000+:￥4.19
5000+:￥4.15 |
Rochester Electronics | TPS1100DR | Texas Instruments | N/A | 500 : $0.76
1,000 : $0.73
|
Verical | TPS1100DR | Texas Instruments | Trans MOSFET P-CH 15V 1.6A 8-Pin SOIC T/R | $0.6562
|
Verical | TPS1100DR | Texas Instruments | FET - 单 - 分立半导体产品 | 2500+:￥4.31+:￥9.8601
10+:￥8.78
25+:￥7.88
50+:￥7.31
100+:￥6.9
250+:￥5.8599
500+:￥5.21
750+:￥5.1999
1000+:￥4.452500+:￥4.791+:￥5.081+:￥5.25 |
立创商城 | TPS1100DR | TI(德州仪器) | 连续漏极电流（Id）（25°C 时）：1.6A 漏源电压（Vdss）：15V 栅源极阈值电压：1.5V @ 250uA 漏源导通电阻：180mΩ @ 1.5A,10V 最大功率耗散（Ta=25°C）：791mW 类型：P沟道 | 1+:￥8.41
10+:￥6.34
30+:￥5.95
100+:￥5.57
500+:￥5.4
1000+:￥5.32
|
立创商城 | TPS1100DRG4 | VBsemi(台湾微碧) | MOS(场效应管) | 1+:￥5.77
10+:￥4.25
30+:￥3.97
100+:￥3.321
500+:￥3.213
1000+:￥3.159
|