封装/外壳BG-T5726K-1
封装Tray
MXHTS85412999
RoHS compliantyes
Packing TypeTRAY
Moisture LevelNA
ConfigurationElectrical Triggered Phase Control Thyristor
VDRM / VRRM [V]2200.0
VDRM/ VRRM (V)2200.0 V
HousingDisc dia 58mm height 26mm / Ceramic
ITAVM/TC [A/°C] (@180° el sin)699/85
rT [mΩ] (@Tvj max) max0.45
Tvj [°C] max125.0
ITSM12200.0A
VT0 [V] (@Tvj max) max0.95
∫I2dt [A²s · 103] (@10ms, Tvj max)744.0
RthJC [K/kW] (@180° el sin) max32.0
RthJC [K/kW] (@180° el sin) max32.0
rT [mΩ] (@Tvj max) max0.45
Clamping force [kn] min max10.5 21.0
ITAVM699 (180 ° el sin)
ITAVM/TC [A/°C] (@180° el sin)699/85
Tvj [°C] max125.0
VT/IT [V/kA] (@Tvj max)2.32/2.85
VT0 [V] (@Tvj max) max0.95
∫I2dt [A²s · 103] (@10ms, Tvj max)744.0
ITSM [A] (@10ms, Tvj max)12200.0
VT/IT [V/kA] (@Tvj max)2.32/2.85
Clamping force [kn] min max10.5 21.0
tq [µs]300.0
ITSM [A] (@10ms, Tvj max)12200.0
无铅情况/RoHs无铅/符合RoHs