封装/外壳BG-T5826K-1
RoHSY
封装Tray
RoHS compliantyes
Packing TypeTRAY
Moisture LevelNA
ConfigurationElectrical Triggered Phase Control Thyristor
VDRM / VRRM [V]6500.0
VDRM/ VRRM (V)6500.0V
HousingDisc dia 58mm height 27mm / Ceramic
ITAVM/TC [A/°C] (@180° el sin)280/85
rT [mΩ] (@Tvj max) max2.8
Tvj [°C] max125.0
ITSM5800.0A
VT0 [V] (@Tvj max) max1.35
∫I2dt [A²s · 103] (@10ms, Tvj max)115.0
RthJC [K/kW] (@180° el sin) max43.0
Clamping force [kn] min max7.0 12.0
ITAVM280 (180 ° el sin)
VT/IT [V/kA] (@Tvj max)2.75/0.5
ITSM [A] (@10ms, Tvj max)5800.0
tq [µs]1000.0
无铅情况/RoHs无铅/符合RoHs