晶体管极性::NPN
Collector Emitter Voltage V(br)ceo::40V
功耗::330mW
DC Collector Current::600mA
DC Current Gain hFE::100
Operating Temperature Max::150°C
Transistor Case Style::SOT-23
No. of Pins::3
MSL::-
Collector Emitter Voltage Vces::300mV
连续集电极电流Ic最大::600mA
Current Gain Hfe Max::300
Current Ic @ Vce Sat::500mA
Current Ic Continuous a Max::600mA
Current Ic hFE::150mA
Device Marking::SMBT2222A
Gain Bandwidth ft Min::300MHz
Gain Bandwidth ft Typ::270MHz
Hfe Min::100
No. of Transistors::1
Noise Factor Typ::4dB
Power Dissipation Ptot Max::330mW
Pulsed Current Icm::600mA
SMD Marking::1P
端接类型::SMD
Voltage Vcbo::75V
Weight (kg):0.000033
Tariff No.:85412900