| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | SIR418DP-T1-GE3 | Siliconix / Vishay | SIR418DP-T1-GE3 N-channel MOSFET Transistor; 23 A; 40 V; 8-Pin PowerPAK SO | +300:$1.17
+600:$1.13
+1500:$1.10
+3000:$1.06 |
Allied Electronics | SIR418DP-T1-GE3 | Vishay Siliconix | Trans MOSFET N-CH 40V 23.5A | 3,000 : $0.83
|
Arrow(艾睿) | SIR418DP-T1-GE3 | Vishay | 半导体 MOSFET 40V 40A 39W 5.0mohm @ 10V FET - 单 - 分立半导体产品 | 3000+:￥3.971+:￥7.88
10+:￥6.32
100+:￥4.8599
500+:￥4.3
1000+:￥4.1999
3000+:￥4.0101
6000+:￥3.8599
9000+:￥3.76
24000+:￥3.641+:￥4.37 |
Avnet Express | SIR418DP-T1-GE3 | Vishay Siliconix | N-CH POWERPAK SO-8 BWL 40V 5 MOHM@10V - Tape and Reel | 3,000 : $0.541
14,999 : $0.5215
29,999 : $0.5101
|
Avnet Express | SIR418DP-T1-GE3 | Vishay Semiconductors | - Tape and Reel | 3,000 : $0.72
|
Digi-Key 得捷电子 | SIR418DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 40A PPAK SO-8 | $1.42000 |
Digi-Key 得捷电子 | SIR418DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 40V 40A PPAK SO-8 | 3,000 : $0.546
|
Digi-Key 得捷电子 | SIR418DP-T1-GE3 | Vishay | 半导体 MOSFET 40V 40A 39W 5.0mohm @ 10V FET - 单 - 分立半导体产品 | 3000+:￥3.97 |
element14 Asia-Pacific | SIR418DP-T1-GE3 | Vishay Siliconix | MOSFET N CH 40V 40A POWERPAK
RoHS : Compliant | 1 : $6.8
10 : $5.6
25 : $5.0
100 : $4.5
250 : $4.0
500 : $3.8
1,000 : $3.7
2,500 : $3.6
|
Mouser 贸泽电子 | SIR418DP-T1-GE3 | Vishay / Siliconix | MOSFET 40V Vds 20V Vgs PowerPAK SO-8 | 1:¥10.4525
10:¥8.6106
100:¥6.6218
500:¥5.7065
3,000:¥5.7065
|
Mouser 贸泽电子 | SIR418DP-T1-GE3 | Vishay | 半导体 MOSFET 40V 40A 39W 5.0mohm @ 10V FET - 单 - 分立半导体产品 | 3000+:￥3.971+:￥7.88
10+:￥6.32
100+:￥4.8599
500+:￥4.3
1000+:￥4.1999
3000+:￥4.0101
6000+:￥3.8599
9000+:￥3.76
24000+:￥3.64 |
立创商城 | SIR418DP-T1-GE3 | VISHAY(威世) | 连续漏极电流（Id）（25°C 时）：40A(Tc) 漏源电压（Vdss）：40V 栅源极阈值电压：2.4V @ 250uA 漏源导通电阻：5mΩ @ 20A,10V 最大功率耗散（Ta=25°C）：39W(Tc) 类型：N沟道 | 1+:￥10.48
10+:￥7.72
30+:￥7.22
100+:￥6.71
500+:￥6.48
1000+:￥6.37
|