SeriesEF

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)600 V

Current - Continuous Drain (Id) @ 25°C8.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs193mOhm @ 9.5A, 10V

Vgs(th) (Max) @ Id5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V

Vgs (Max)±30V

Input Capacitance (Ciss) (Max) @ Vds1081 pF @ 100 V

FET Feature-

Power Dissipation (Max)156W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageD2PAK (TO-263)

Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB