| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | SI3458BDV-T1-GE3 | Siliconix / Vishay | MOSFET; N-Ch; Vds 60V; Vgs +/- 20V; Rds(on) 82mohm; Id 3.2A; TSOP-6; Pd 2W | +3000:$0.50
+150000:$0.49 |
Arrow(艾睿) | SI3458BDV-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 4.1A 3.3W 100mohm @ 10V | 3000+:￥2.42
6000+:￥2.26
15000+:￥2.17
30000+:￥2.09
75000+:￥2.06
150000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
3000+:￥2.48
6000+:￥2.27
9000+:￥2.25
24000+:￥2.171+:￥6.19
10+:￥4.8401
100+:￥3.681+:￥2.7 |
Avnet Express | SI3458BDV-T1-GE3 | Vishay Semiconductors | VISSI3458BDV-T1-GE3 P-CHANNEL 60-V (D-S) | 3,000 : $0.304
12,000 : $0.2764
27,000 : $0.2534
|
Avnet Express | SI3458BDV-T1-GE3 | Vishay Siliconix | N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel | 3,000
5a8
: $0.3282
14,999 : $0.3112
29,999 : $0.3065
|
Digi-Key 得捷电子 | SI3458BDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 4.1A 6-TSOP | 10 : $0.782
1 : $0.89
|
Digi-Key 得捷电子 | SI3458BDV-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 4.1A 3.3W 100mohm @ 10V | 3000+:￥2.42
6000+:￥2.26
15000+:￥2.17
30000+:￥2.09
75000+:￥2.06
150000+:￥2.0099 |
Digi-Key 得捷电子 | SI3458BDV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 60V 4.1A 6TSOP | $0.95000 |
element14 Asia-Pacific | SI3458BDV-T1-GE3 | Vishay Siliconix | N CH MOSFET | 500 : $0.46
1,000 : $0.43
2,500 : $0.39
|
element14 e络盟电子 | SI3458BDV-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 4.1A 3.3W 100mohm @ 10V | 3000+:￥2.42
6000+:￥2.26
15000+:￥2.17
30000+:￥2.09
75000+:￥2.06
150000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
3000+:￥2.48
6000+:￥2.27
9000+:￥2.25
24000+:￥2.171+:￥6.19
10+:￥4.8401
100+:￥3.68 |
Farnell element14 | SI3458BDV-T1-GE3 | Vishay Siliconix | N CH MOSFET
RoHS : Compliant | 250 : $0.317
500 : $0.276
|
Future Electronics | SI3458BDV-T1-GE3 | Vishay Intertechnologies | N-Channel 60 V 0.01 Ohm 3.3 W Surface Mount Power Mosfet - TSOP-6
RoHS : Compliant | 3,000 : $0.1567
6,000 : $0.15
|
Mouser 贸泽电子 | SI3458BDV-T1-GE3 | Vishay / Siliconix | MOSFET 60V 4.1A 3.3W 100mohm @ 10V | 1:¥6.9947
10:¥5.6387
100:¥4.2827
500:¥3.5369
1,000:¥2.825
3,000:¥2.5651
|
Mouser 贸泽电子 | SI3458BDV-T1-GE3 | Vishay | FET - 单 TrenchFET® 分立半导体产品 半导体 MOSFET 60V 4.1A 3.3W 100mohm @ 10V | 3000+:￥2.42
6000+:￥2.26
15000+:￥2.17
30000+:￥2.09
75000+:￥2.06
150000+:￥2.00991+:￥5.28
10+:￥4.13
100+:￥3.14
500+:￥2.6701
1000+:￥2.48
3000+:￥2.48
6000+:￥2.27
9000+:￥2.25
24000+:￥2.17 |
Newark element14 | SI3458BDV-T1-GE3 | Vishay Siliconix | N CHANNEL MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:60V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:2W ;RoHS Compliant: Yes | 250 : $0.334
500 : $0.308
1,000 : $0.308
|
Verical | SI3458BDV-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 3.2A 6-Pin TSOP T/R | $0.3094
|
立创商城 | SI3458BDV-T1-GE3 | VISHAY(威世) | 连续漏极电流（Id）（25°C 时）：4.1A 漏源电压（Vdss）：60V 栅源极阈值电压：3V @ 250uA 漏源导通电阻：100mΩ @ 3.2A,10V 最大功率耗散（Ta=25°C）：2W 类型：N沟道 | 1+:￥6.18
10+:￥6.01
|