Series-

PackageTube

FET TypeN-Channel

TechnologySiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C119A (Tc)

Drive Voltage (Max Rds On, Min Rds On)18V

Rds On (Max) @ Id, Vgs24mOhm @ 50A, 18V

Vgs(th) (Max) @ Id5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V

Vgs (Max)+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V

FET Feature-

Power Dissipation (Max)565W (Tc)

Operating Temperature-55°C ~ 200°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247 Long Leads

Package / CaseTO-247-3