Series-

PackageTape & Reel (TR)

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)30 V

Current - Continuous Drain (Id) @ 25°C10A (Ta)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs12mOhm @ 11A, 10V

Vgs(th) (Max) @ Id2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds1415 pF @ 15 V

FET Feature-

Power Dissipation (Max)730mW (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device Package6-PQFN (2x2)

Package / Case6-WDFN Exposed Pad