型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
RJK0651DPB | Silicon N Channel Power MOS FET Power Switching | RENESAS[Renesas Technology Corp] | ![RENESAS[Renesas Technology Corp]的LOGO](/PdfSupLogo/233RENESAS.GIF) | 87.19 Kbytes | 共7页 |  | 无 |
RJK0651DPB | 60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching | RENESAS[Renesas Technology Corp] | ![RENESAS[Renesas Technology Corp]的LOGO](/PdfSupLogo/233RENESAS.GIF) | 107.99 Kbytes | 共7页 |  | 无 |
RJK0651DPB_13 | 60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching | RENESAS[Renesas Technology Corp] | ![RENESAS[Renesas Technology Corp]的LOGO](/PdfSupLogo/233RENESAS.GIF) | 107.99 Kbytes | 共7页 |  | 无 |
RJK0651DPB-00#J5 | MOSFET JET Series MOSFET 60V LFPAK Pb-F HF | Renesas Electronics |  | 102.64 Kbytes | 共7页 |  | 无 |
RJK0651DPB-00#J5 | 连续漏极电流(Id)(25°C 时):25A 漏源电压(Vdss):60V 栅源极阈值电压:- 漏源导通电阻:14mΩ @ 12.5A,10V 最大功率耗散(Ta=25°C):45W(Tc) 类型:N沟道 | RENESAS(瑞萨) |  | 98.36 Kbytes | 共7页 |  | 无 |
RJK0651DPB-00/J5 | 连续漏极电流(Id)(25°C 时):25A 漏源电压(Vdss):60V 栅源极阈值电压:- 漏源导通电阻:14mΩ @ 12.5A,10V 最大功率耗散(Ta=25°C):45W(Tc) 类型:N沟道 | RENESAS(瑞萨) |  | 102.64 Kbytes | 共7页 |  | 无 |
RJK0651DPB-00-J5 | Silicon N Channel Power MOS FET Power Switching | RENESAS[Renesas Technology Corp] | ![RENESAS[Renesas Technology Corp]的LOGO](/PdfSupLogo/233RENESAS.GIF) | 87.19 Kbytes | 共7页 |  | 无 |
RJK0651DPB-00-J5 | 60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching | RENESAS[Renesas Technology Corp] | ![RENESAS[Renesas Technology Corp]的LOGO](/PdfSupLogo/233RENESAS.GIF) | 107.99 Kbytes | 共7页 |  | 无 |