Series-

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)100 V

Current - Continuous Drain (Id) @ 25°C18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs100mOhm @ 9A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds-

FET FeatureCurrent Sensing

Power Dissipation (Max)79W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-220AB-5

Package / CaseTO-220-5