| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Arrow(艾睿) | PESD12VV1BL,315 | NXP Semiconductors | TVS - 二极管 - 电路保护 半导体 TVS 二极管 - 瞬态电压抑制器 ESD Protection Diode Very Low Capacitance | 10000+:￥0.64
30000+:￥0.58
50000+:￥0.56
100000+:￥0.54
250000+:￥0.541+:￥2.15
10+:￥1.46
100+:￥0.8399
1000+:￥0.68
2500+:￥0.6501
10000+:￥0.6501
20000+:￥0.59
50000+:￥0.58
100000+:￥0.5610000+:￥0.3101
20000+:￥0.291+:￥0.73 |
Digi-Key 得捷电子 | PESD12VV1BL | Nexperia USA Inc. | NOW NEXPERIA PESD12VV1BL - TRANS | $0.07000 |
Digi-Key 得捷电子 | PESD12VV1BL,315 | NXP Semiconductors | TVS - 二极管 - 电路保护 半导体 TVS 二极管 - 瞬态电压抑制器 ESD Protection Diode Very Low Capacitance | 10000+:￥0.64
30000+:￥0.58
50000+:￥0.56
100000+:￥0.54
250000+:￥0.54 |
Digi-Key 得捷电子 | PESD12VV1BL,315 | Nexperia USA Inc. | TVS DIODE 12V 38V DFN1006-2 | $0.46000 |
Digi-Key 得捷电子 | PESD12VV1BL315 | Nexperia USA Inc. | NOW NEXPERIA PESD12VV1BL - TRANS | $0.07000 |
Digi-Key 得捷电子 | PESD12VV1BLSYL | Nexperia USA Inc. | PESD12VV1BLS/SOD882BD/XSON2 | $0.31000 |
Future(富昌) | PESD12VV1BL,315 | NXP Semiconductors | TVS - 二极管 - 电路保护 半导体 TVS 二极管 - 瞬态电压抑制器 ESD Protection Diode Very Low Capacitance | 10000+:￥0.64
30000+:￥0.58
50000+:￥0.56
100000+:￥0.54
250000+:￥0.541+:￥2.15
10+:￥1.46
100+:￥0.8399
1000+:￥0.68
2500+:￥0.6501
10000+:￥0.6501
20000+:￥0.59
50000+:￥0.58
100000+:￥0.5610000+:￥0.3101
20000+:￥0.29 |
Mouser 贸泽电子 | PESD12VV1BL,315 | NXP Semiconductors | TVS - 二极管 - 电路保护 半导体 TVS 二极管 - 瞬态电压抑制器 ESD Protection Diode Very Low Capacitance | 10000+:￥0.64
30000+:￥0.58
50000+:￥0.56
100000+:￥0.54
250000+:￥0.541+:￥2.15
10+:￥1.46
100+:￥0.8399
1000+:￥0.68
2500+:￥0.6501
10000+:￥0.6501
20000+:￥0.59
50000+:￥0.58
100000+:￥0.56 |
Mouser 贸泽电子 | PESD12VV1BL,315 | Nexperia | ESD 抑制器/TVS 二极管 ESD Protection Diode Very Low Capacitance | 1:¥3.6838
10:¥2.6103
100:¥1.1978
1,000:¥0.92208
10,000:¥0.71416
|
立创商城 | PESD12VV1BL,315 | Nexperia(安世) | 反向关断电压（典型值）：12V (Max) 击穿电压（最小值）：14.6V 峰值脉冲电流（10/1000us）：7.8A (8/20us) 极性：Bidirectional 箝位电压：38V | 10+:￥0.252687
100+:￥0.185388
300+:￥0.173027
1000+:￥0.160666
5000+:￥0.155172
10000+:￥0.152457
|
立创商城 | PESD12VV1BL-N | BORN伯恩半导体 | 反向关断电压（典型值）：12V (Max) 击穿电压（最小值）：13.3V 峰值脉冲电流（10/1000us）：5A (8/20us) 极性：Bidirectional 箝位电压：24V | 10+:￥0.227492
100+:￥0.172514
300+:￥0.162416
1000+:￥0.144702
5000+:￥0.140439
10000+:￥0.138332
|