Maximum Transition Frequency:2000(Typ) MHz

Minimum DC Current Gain:20@100mA@13.5 V

Maximum Collector Base Voltage:36 V

Maximum Power Dis 1000 sipation:1000 mW

Mounting:Through Hole

Pin_Count:3

Maximum Collector Emitter Voltage:16 V

Material:Si

Maximum Collector Emitter Voltage Range:

Maximum Emitter Base Voltage:3 V

Operating Temperature:-55 to 150 °C

Minimum DC Current Gain Range:2 to 30

Output Power:0.9(Typ) W

Number of Elements per Chip:1

Maximum DC Collector Current:0.5 A

Maximum DC Collector Current Range:0.5 to 2 A

Configuration:Single

Type:NPN

Dimension:6.09(Max) x 5.08(Max) x 8.62(Max) mm