Series-

PackageBag

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)60 V

Current - Continuous Drain (Id) @ 25°C70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)10V

Rds On (Max) @ Id, Vgs14mOhm @ 54A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V

FET Feature-

Power Dissipation (Max)230W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-3P

Package / CaseTO-3P-3, SC-65-3