Collector Current50 mA

Collector to Base Voltage30 V

Collector to Emitter Voltage15 V

ConfigurationCommon Base

Diameter5.28 mm

Dimensions5.28 Dia. x 4.57 H mm

Emitter to Base Voltage3 V

Height0.18" (4.57mm)

MaterialSi

Maximum Operating Temperature+150 °C

Minimum Operating Temperature-55 °C

Mounting TypeThrough Hole

Number of Elements per Chip1

Number of Pins3

Operating Frequency600 MHz

Package TypeTO-106

PolarityNPN

Power Dissipation625 mW

Primary TypeSi

Product HeaderSilicon NPN Transistor

Resistance, Thermal, Junction to Case83.3 °C/W

SeriesTransistor Series

Temperature Operating Range-55 to +150 °C

Transistor TypeNPN

TypeAmplifier, High Frequency

UPC Code768249010012

Voltage, Breakdown, Collector to Emitter15 V

Voltage, Collector to Emitter, Saturation0.4 V

Voltage, Saturation, Base to Emitter1 V