Series-

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)60 V

Current - Continuous Drain (Id) @ 25°C1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs220mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs26 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V

FET Feature-

Power Dissipation (Max)1.25W (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageMicro8™

Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)