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FET Type2 N Channel (Phase Leg)

FET FeatureSilicon Carbide (SiC)

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C495A (Tc)

Rds On (Max) @ Id, Vgs5.2mOhm @ 240A, 20V

Vgs(th) (Max) @ Id2.8V @ 6mA

Gate Charge (Qg) (Max) @ Vgs1392nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds18.1pF @ 1000V

Power - Max2.031kW (Tc)

Operating Temperature-40°C ~ 175°C (TJ)

Mounting TypeChassis Mount

Package / CaseModule

Supplier Device PackageSP6C