Series-

PackageTube

FET TypeN-Channel

TechnologySiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)1.2 kV

Current - Continuous Drain (Id) @ 25°C55A (Tc)

Drive Voltage (Max Rds On, Min Rds On)20V

Rds On (Max) @ Id, Vgs50mOhm @ 40A, 20V

Vgs(th) (Max) @ Id2.7V @ 1mA

Gate Charge (Qg) (Max) @ Vgs137 nC @ 20 V

Vgs (Max)+25V, -10V

Input Capacitance (Ciss) (Max) @ Vds1990 pF/m @ 1000 V

FET Feature-

Power Dissipation (Max)245W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeChassis Mount

Supplier Device PackageSOT-227 (ISOTOP®)

Package / CaseSOT-227-4, miniBLOC