Device Marking:2N
IC(A):1.5
Vceo(V):25
hFE Min/Max:60/135
hFE IC/VCE(A)/(Volts):0.5/2
TransistorPolarity:PNP
Vdss(V):50
ID(A):0.2
RDS(on)(mΩ)Max(mΩ):3.5
RDS(on)(mΩ)@VGS/IDS(V)/(A):5/0.2
MOSFETPolarity:N-Channel(withESD)
封装/外壳:DFN2020
无铅情况/RoHs:无铅/符合RoHs