| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | IRFBE30PBF | Vishay PCS | MOSFET, Power,N-Ch,VDSS 800V,RDS(ON) 3 Ohms,ID 4.1A,TO-220AB,PD 125W,VGS +/-20V | +1:$3.07
+10:$2.93
+25:$2.78
+100:$2.63 |
Allied Electronics | IRFBE30PBF | Siliconix / Vishay | IRFBE30PBF N-channel MOSFET Transistor; 4.1 A; 800 V; 3-Pin TO-220AB | +1000:$5.27
+2000:$4.25 |
Arrow(艾睿) | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.631+:￥10.47
10+:￥8.44
100+:￥7.57
250+:￥6.72
500+:￥5.85
1000+:￥4.88
2000+:￥4.56
5000+:￥4.3650+:￥4.6701
100+:￥4.61
500+:￥3.9650+:￥4.32
800+:￥4.0225+:￥14.47
100+:￥13.2199
250+:￥12.0499
500+:￥11.31+:￥6.39 |
Avnet Express | IRFBE30PBF | Vishay Semiconductors | - Rail/Tube | 150 : $0.726
|
Chip1Stop | IRFBE30PBF | Vishay Intertechnologies | Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB
RoHS : Compliant | 50 : $0.939
500 : $0.865
2,000 : $0.639
|
ChipOneStop | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.631+:￥10.47
10+:￥8.44
100+:￥7.57
250+:￥6.72
500+:￥5.85
1000+:￥4.88
2000+:￥4.56
5000+:￥4.3650+:￥4.6701
100+:￥4.61
500+:￥3.96 |
Digi-Key 得捷电子 | IRFBE30PBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO220AB | $2.04000 |
Digi-Key 得捷电子 | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.04 |
Digi-Key 得捷电子 | IRFBE30PBF | Vishay Siliconix | MOSFET N-CH 800V 4.1A TO-220AB | 500 : $0.8995
100 : $1.0948
10 : $1.362
1 : $1.52
|
element14 Asia-Pacific | IRFBE30PBF | Vishay Semiconductors | MOSFET, N, 800V, 4.1A, TO-220
RoHS : Compliant | 1 : ?1,863.0
10 : ?1,500.0
100 : ?1,348.0
250 : ?1,195.0
500 : ?1,041.0
1,000 : ?868.0
2,000 : ?811.0
5,000 : ?775.0
|
element14 Asia-Pacific | IRFBE30PBF | Vishay Siliconix | N CHANNEL MOSFET, 800V, 4.1A TO-220
RoHS : Compliant | 1 : ?1,863.0
10 : ?1,500.0
100 : ?1,399.0
|
element14 e络盟电子 | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.631+:￥10.47
10+:￥8.44
100+:￥7.57
250+:￥6.72
500+:￥5.85
1000+:￥4.88
2000+:￥4.56
5000+:￥4.36 |
Farnell element14 | IRFBE30PBF | Vishay Semiconductors | MOSFET, N, 800V, 4.1A, TO-220
RoHS : Compliant | 250 : $1.41
1,000 : $1.0
|
Future Electronics | IRFBE30PBF | Vishay Intertechnologies | Single N-Channel 800 V 3 Ohms Flange Mount Power Mosfet - TO-220AB
RoHS : Compliant | 20 : $0.6833
400 : $0.6667
1,750 : $0.6389
|
Future(富昌) | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.631+:￥10.47
10+:￥8.44
100+:￥7.57
250+:￥6.72
500+:￥5.85
1000+:￥4.88
2000+:￥4.56
5000+:￥4.3650+:￥4.6701
100+:￥4.61
500+:￥3.9650+:￥4.32
800+:￥4.02 |
Mouser 贸泽电子 | IRFBE30PBF | Vishay / Siliconix | MOSFET 800V Single N-Channel HEXFET | 1:¥13.8312
10:¥12.0684
100:¥10.8367
500:¥8.3733
1,000:¥6.9947
|
Mouser 贸泽电子 | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.63 |
Newark element14 | IRFBE30PBF | Vishay Siliconix | N CHANNEL MOSFET, 800V, 4.1A TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3 ;RoHS Compliant: Yes | 250 : $1.79
500 : $1.56
1,000 : $1.37
2,000 : $1.27
5,000 : $1.18
|
Newark element14 | IRFBE30PBF | Vishay Semiconductors | MOSFET, N, 800V, 4.1A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:4.1A; Drain Source Voltage Vds:800V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation ;RoHS Compliant: Yes | 500 : $1.41
1,000 : $1.04
|
RS Components | IRFBE30PBF | Vishay Intertechnologies | MOSFET N-Channel 800V 4.1A TO220AB | 价格未公开 |
RS(欧时) | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.631+:￥10.47
10+:￥8.44
100+:￥7.57
250+:￥6.72
500+:￥5.85
1000+:￥4.88
2000+:￥4.56
5000+:￥4.3650+:￥4.6701
100+:￥4.61
500+:￥3.9650+:￥4.32
800+:￥4.0225+:￥14.47
100+:￥13.2199
250+:￥12.0499
500+:￥11.3 |
Rutronik | IRFBE30PBF | Vishay Intertechnologies | N-CH 800V 4A 3000mOhm TO220-3 RoHSconf | 1,000 : $0.7116
1,500 : $0.6997
2,000 : $0.6877
|
TME Electronic Components | IRFBE30PBF | Vishay Intertechnologies | Transistor: N-MOSFET; unipolar; 800V; 4A; 125W; TO220AB | 50 : $0.71
250 : $0.66
|
Verical | IRFBE30PBF | Vishay Intertechnologies | Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-220AB | $0.5805
|
Verical | IRFBE30PBF | Vishay | 半导体 MOSFET 800V Single N-Channel HEXFET FET - 单 - 分立半导体产品 | 1+:￥11.56
10+:￥10.46
25+:￥9.3501
100+:￥8.41
250+:￥7.48
500+:￥6.5399
1000+:￥5.42
2500+:￥5.041+:￥9.94
10+:￥7.94
100+:￥6.09
500+:￥5.41
1000+:￥5.28
2000+:￥5.04
5000+:￥4.85
10000+:￥4.74
25000+:￥4.631+:￥10.47
10+:￥8.44
100+:￥7.57
250+:￥6.72
500+:￥5.85
1000+:￥4.88
2000+:￥4.56
5000+:￥4.3650+:￥4.6701
100+:￥4.61
500+:￥3.9650+:￥4.32
800+:￥4.0225+:￥14.47
100+:￥13.2199
250+:￥12.0499
500+:￥11.31+:￥6.391+:￥4.25 |
立创商城 | IRFBE30PBF | Infineon(英飞凌) | 连续漏极电流（Id）（25°C 时）：4.1A 漏源电压（Vdss）：800V 栅源极阈值电压：4V @ 250uA 漏源导通电阻：3Ω @ 2.5A,10V 最大功率耗散（Ta=25°C）：125W 类型：N沟道 | 1+:￥6.52
10+:￥4.91
30+:￥4.61
100+:￥3.888
500+:￥3.771
1000+:￥3.708
|