SeriesOptiMOS™3

PackageTube

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)100 V

Current - Continuous Drain (Id) @ 25°C39A (Tc)

Drive Voltage (Max Rds On, Min Rds On)6V, 10V

Rds On (Max) @ Id, Vgs12.6mOhm @ 39A, 10V

Vgs(th) (Max) @ Id3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs35 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 50 V

FET Feature-

Power Dissipation (Max)33W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackagePG-TO220 Full Pack

Package / CaseTO-220-3 Full Pack