SeriesUltraFET™

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)55 V

Current - Continuous Drain (Id) @ 25°C70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs12mOhm @ 70A, 10V

Vgs(th) (Max) @ Id4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs130 nC @ 20 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds2000 pF @ 25 V

FET Feature-

Power Dissipation (Max)124W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-262AA

Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA