SeriesG2R™

PackageTube

FET TypeN-Channel

TechnologySiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)1700 V

Current - Continuous Drain (Id) @ 25°C4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)20V

Rds On (Max) @ Id, Vgs1.2Ohm @ 2A, 20V

Vgs(th) (Max) @ Id4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs-

Vgs (Max)+20V, -5V

Input Capacitance (Ciss) (Max) @ Vds139 pF @ 1000 V

FET Feature-

Power Dissipation (Max)53W (Tc)

Operating Temperature-55°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-3

Package / CaseTO-247-3