SeriesE-Series, Automotive

PackageTube

FET TypeN-Channel

TechnologySiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)900 V

Current - Continuous Drain (Id) @ 25°C22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)15V

Rds On (Max) @ Id, Vgs155mOhm @ 15A, 15V

Vgs(th) (Max) @ Id3.5V @ 3mA

Gate Charge (Qg) (Max) @ Vgs18 nC @ 15 V

Vgs (Max)+15V, -4V

Input Capacitance (Ciss) (Max) @ Vds414 pF @ 600 V

FET Feature-

Power Dissipation (Max)83W (Tc)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageTO-263-7

Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA