销售商 | 型号 | 制造商 | 功能描述 | 价格 |
 Allied Electronics | DMN3190LDW-7 | Diodes Inc | MOSFET Dual N-Ch 30V 1A Enhanc. SOT363 | +250:$0.16 +500:$0.11 +1250:$0.10 +2500:$0.09 |
 Allied Electronics | DMN3190LDW-7 | Diodes Incorporated | MOSFET Dual N-Ch 30V 1A Enhanc. SOT363 | 2,500 : $0.0726
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 Arrow(艾睿) | DMN3190LDW-7 | DIODES ZETEX | | 3000+:¥0.58 6000+:¥0.5199 15000+:¥0.46 30000+:¥0.43 75000+:¥0.39 150000+:¥0.381+:¥2.96 10+:¥1.6701 100+:¥0.71 1000+:¥0.55 3000+:¥0.4801 9000+:¥0.43 24000+:¥0.43 45000+:¥0.4 99000+:¥0.381+:¥0.42 |
 Avnet Express | DMN3190LDW-7 | Diodes Incorporated | | 3,000 : $0.056
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 Digi-Key 得捷电子 | DMN3190LDW-7 | Diodes Incorporated | MOSFET 2N-CH 30V 1A SOT363 | 15,000 : $0.064 6,000 : $0.072 3,000 : $0.08
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 Digi-Key 得捷电子 | DMN3190LDW-7 | Diodes Incorporated | MOSFET 2N-CH 30V 1A SOT363 | 10 : $0.33 1 : $0.44
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 Digi-Key 得捷电子 | DMN3190LDW-7 | Diodes Inc. | FET - 阵列 - 分立半导体产品 半导体 MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 3000+:¥0.58 6000+:¥0.5199 15000+:¥0.46 30000+:¥0.43 75000+:¥0.39 150000+:¥0.38 |
 Future Electronics | DMN3190LDW-7 | Diodes Incorporated | DUAL,30V,.32A,190MOHM,SOT-363 RoHS : Compliant | 3,000 : $0.0588 9,000 : $0.0539 18,000 : $0.0526
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 Mouser 贸泽电子 | DMN3190LDW-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 1:¥3.3787 10:¥2.2261 100:¥0.95259 1,000:¥0.72998 3,000:¥0.5537
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 Mouser 贸泽电子 | DMN3190LDW-7 | Diodes Inc. | FET - 阵列 - 分立半导体产品 半导体 MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 3000+:¥0.58 6000+:¥0.5199 15000+:¥0.46 30000+:¥0.43 75000+:¥0.39 150000+:¥0.381+:¥2.96 10+:¥1.6701 100+:¥0.71 1000+:¥0.55 3000+:¥0.4801 9000+:¥0.43 24000+:¥0.43 45000+:¥0.4 99000+:¥0.38 |
 Verical | DMN3190LDW-7 | Zetex / Diodes Inc | Trans MOSFET N-CH 30V 1A 6-Pin SOT-363 T/R | $0.0478
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 Verical | DMN3190LDW-7 | DIODES ZETEX | | 3000+:¥0.58 6000+:¥0.5199 15000+:¥0.46 30000+:¥0.43 75000+:¥0.39 150000+:¥0.381+:¥2.96 10+:¥1.6701 100+:¥0.71 1000+:¥0.55 3000+:¥0.4801 9000+:¥0.43 24000+:¥0.43 45000+:¥0.4 99000+:¥0.381+:¥0.421+:¥0.38 |
 立创商城 | DMN3190LDW-7 | DIODES(美台) | 连续漏极电流(Id)(25°C 时):1A 漏源电压(Vdss):30V 栅源极阈值电压:2.8V @ 250uA 漏源导通电阻:190mΩ @ 1.3A,10V 最大功率耗散(Ta=25°C):320mW 类型:双N沟道 | 5+:¥0.542672 50+:¥0.411033 150+:¥0.386855 500+:¥0.362676 2500+:¥0.35193 5000+:¥0.34662
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