| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Allied Electronics | DMG6402LVT-7 | Diodes Inc | MOSFET N-Ch 30V 6A Enhancement TSOT26 | +250:$0.16
+500:$0.13
+1250:$0.11
+2500:$0.10 |
Allied Electronics | DMG6402LVT-7 | Diodes Incorporated | MOSFET N-Ch 30V 6A Enhancement TSOT26 | 2,500 : $0.0816
|
Arrow(艾睿) | DMG6402LVT-7 | DIODES ZETEX | | 1+:￥3.2
10+:￥2.26
25+:￥1.85
100+:￥1.49
250+:￥1.08
500+:￥0.88
1000+:￥0.681+:￥2.55
10+:￥1.4801
100+:￥0.7
1000+:￥0.5199
3000+:￥0.51
9000+:￥0.49
24000+:￥0.49
45000+:￥0.44
99000+:￥0.423000+:￥0.361+:￥0.42 |
Avnet Express | DMG6402LVT-7 | Diodes Incorporated | | 32,999 : $0.0428
|
Digi-Key 得捷电子 | DMG6402LVT-7 | Diodes Incorporated | MOSFET N-CH 30V 6A TSOT26 | 15,000 : $0.06975
6,000 : $0.0765
3,000 : $0.081
|
Digi-Key 得捷电子 | DMG6402LVT-7 | Diodes Inc. | FET - 单 - 分立半导体产品 半导体 MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 1+:￥3.2
10+:￥2.26
25+:￥1.85
100+:￥1.49
250+:￥1.08
500+:￥0.88
1000+:￥0.68 |
Future(富昌) | DMG6402LVT-7 | Diodes Inc. | FET - 单 - 分立半导体产品 半导体 MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 1+:￥3.2
10+:￥2.26
25+:￥1.85
100+:￥1.49
250+:￥1.08
500+:￥0.88
1000+:￥0.681+:￥2.55
10+:￥1.4801
100+:￥0.7
1000+:￥0.5199
3000+:￥0.51
9000+:￥0.49
24000+:￥0.49
45000+:￥0.44
99000+:￥0.423000+:￥0.36 |
Mouser 贸泽电子 | DMG6402LVT-7 | Diodes Incorporated | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 1:¥2.7685
10:¥1.9549
100:¥0.90626
1,000:¥0.69156
3,000:¥0.59212
|
Mouser 贸泽电子 | DMG6402LVT-7 | Diodes Inc. | FET - 单 - 分立半导体产品 半导体 MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 1+:￥3.2
10+:￥2.26
25+:￥1.85
100+:￥1.49
250+:￥1.08
500+:￥0.88
1000+:￥0.681+:￥2.55
10+:￥1.4801
100+:￥0.7
1000+:￥0.5199
3000+:￥0.51
9000+:￥0.49
24000+:￥0.49
45000+:￥0.44
99000+:￥0.42 |
Verical | DMG6402LVT-7 | Zetex / Diodes Inc | Trans MOSFET N-CH 30V 6A Automotive 6-Pin TSOT-26 T/R | $0.0585
|
立创商城 | DMG6402LVT-7 | DIODES(美台) | 连续漏极电流（Id）（25°C 时）：6A 漏源电压（Vdss）：30V 栅源极阈值电压：2V @ 250uA 漏源导通电阻：30mΩ @ 7A,10V 最大功率耗散（Ta=25°C）：1.75W 类型：N沟道 | 5+:￥0.604011
50+:￥0.455126
150+:￥0.42778
500+:￥0.400433
2500+:￥0.388279
5000+:￥0.382274
|