型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
D882S | NPN Plastic Encapsulated Transistor | SECOS[SeCoS Halbleitertechnologie GmbH] | ![SECOS[SeCoS Halbleitertechnologie GmbH]的LOGO](/PdfSupLogo/626SECOS.GIF) | 214.92 Kbytes | 共2页 |  | 无 |
D882S | TO-92 Plastic-Encapsulate Transistors | JIANGSU[Jiangsu Changjiang Electronics Technology Co., Ltd] | ![JIANGSU[Jiangsu Changjiang Electronics Technology Co., Ltd]的LOGO](/PdfSupLogo/298JIANGSU.GIF) | 207.77 Kbytes | 共5页 |  | 无 |
D882S | NPN Plastic Encapsulated Transistor | SECOS[SeCoS Halbleitertechnologie GmbH] | ![SECOS[SeCoS Halbleitertechnologie GmbH]的LOGO](/PdfSupLogo/626SECOS.GIF) | 214.92 Kbytes | 共2页 |  | 无 |
D882SS | NPN EPITAXIAL SILICON TRANSISTOR | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 60.1 Kbytes | 共4页 |  | 2SC6015,2SC1927,2SC3583,2SC4092,2SC4186,2SC4957,2SC5178,2SC5336,2SD1001,UPA807T |
D882SS_09 | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 159.66 Kbytes | 共4页 |  | 无 |
D882SSG-P-AE3-R | 集电极电流Ic:3A 额定功率:350mW 晶体管类型:NPN 集射极击穿电压Vce:30V | UTC(友顺) |  | 175.84 Kbytes | 共4页 |  | 无 |
D882SSG-X-AE3-R | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 159.66 Kbytes | 共4页 |  | 无 |
D882SSL-X-AE3-R | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 159.66 Kbytes | 共4页 |  | 无 |
D882SS-X-AE3-R | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 159.66 Kbytes | 共4页 |  | 无 |