Series-

PackageTray

FET Type6 N-Channel (3-Phase Bridge)

FET FeatureSilicon Carbide (SiC)

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C450A

Rds On (Max) @ Id, Vgs3.25mOhm @ 300A

Vgs(th) (Max) @ Id-

Gate Charge (Qg) (Max) @ Vgs295nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds30nF @ 600V

Power - Max-

Operating Temperature-40°C ~ 175°C (TJ)

Mounting TypeChassis Mount

Package / CaseModule

Supplier Device PackageModule