Series-

PackageBulk

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)12 V

Current - Continuous Drain (Id) @ 25°C6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs34mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V

Vgs (Max)±8V

Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 6 V

FET Feature-

Power Dissipation (Max)1.6W (Ta)

Operating Temperature150°C

Mounting TypeSurface Mount

Supplier Device Package6-CPH

Package / CaseSOT-23-6 Thin, TSOT-23-6