Series-

PackageTray

FET TypeP-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)30 V

Current - Continuous Drain (Id) @ 25°C11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V

Rds On (Max) @ Id, Vgs13mOhm @ 1A, 10V

Vgs(th) (Max) @ Id3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V

Vgs (Max)±20V

Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 8 V

FET Feature-

Power Dissipation (Max)-

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackageDie

Package / CaseDie