Series-

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FET Type2 N-Channel (Half Bridge)

FET FeatureSilicon Carbide (SiC)

Drain to Source Voltage (Vdss)1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C105A

Rds On (Max) @ Id, Vgs14mOhm @ 100A, 15V

Vgs(th) (Max) @ Id3.6V @ 35mA

Gate Charge (Qg) (Max) @ Vgs324nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds800V

Power - Max10mW

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeChassis Mount

Package / CaseModule

Supplier Device Package-