SeriesC3M™

PackageTube

FET TypeN-Channel

TechnologySiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss)650 V

Current - Continuous Drain (Id) @ 25°C97A (Tc)

Drive Voltage (Max Rds On, Min Rds On)15V

Rds On (Max) @ Id, Vgs34mOhm @ 33.5A, 15V

Vgs(th) (Max) @ Id3.6V @ 9.22mA

Gate Charge (Qg) (Max) @ Vgs112 nC @ 15 V

Vgs (Max)+19V, -8V

Input Capacitance (Ciss) (Max) @ Vds2980 pF @ 600 V

FET Feature-

Power Dissipation (Max)326W (Tc)

Operating Temperature-40°C ~ 175°C (TJ)

Mounting TypeThrough Hole

Supplier Device PackageTO-247-4L

Package / CaseTO-247-4