型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
BSP295 | SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | SIEMENS[Siemens Semiconductor Group] | ![SIEMENS[Siemens Semiconductor Group]的LOGO](/PdfSupLogo/144SIEMENS.GIF) | 180.33 Kbytes | 共9页 |  | BSS295,BSP315,BSS123,BSS296,BSP316,BSS297,BSP123,BSP317,BSS84,BSS87 |
BSP295 | SIPMOS Small-Signal Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 290.88 Kbytes | 共8页 |  | BSP298,BSS101,BSS229,BSP372,BS107,BSP299,BSS110,BSS284,BSP373 |
BSP295 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 714.12 Kbytes | 共8页 |  | 无 |
BSP295 H6327 | MOSFET N-Ch 60V 1.8A SOT-223-3 | Infineon Technologies |  | 442.90 Kbytes | 共8页 |  | 无 |
BSP295 H6327 | 连续漏极电流(Id)(25°C 时):1.8A 漏源电压(Vdss):60V 栅源极阈值电压:1.8V @ 400uA 漏源导通电阻:300mΩ @ 1.8A,10V 最大功率耗散(Ta=25°C):1.8W 类型:N沟道 | Infineon(英飞凌) |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295_07 | SIPMOS Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 714.12 Kbytes | 共8页 |  | 无 |
BSP295E6327 | MOSFET N-CH 60V 1.8A SOT223 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295E6327 | MOSFET N-CH 60V 1.8A SOT223-4 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295E6327T | MOSFET N-CH 60V 1.8A SOT223 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295E6327T | MOSFET N-CH 60V 1.8A SOT223-4 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295H6327 | N沟道,60V,1.8A,300mΩ@10V | Infineon(英飞凌) |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295H6327XTSA1 | MOSFET N-Ch 60V 1.8A SOT-223-3 | Infineon Technologies |  | 442.90 Kbytes | 共8页 |  | 无 |
BSP295H6327XTSA1 | MOSFET N-CH 60V 1.8A SOT223-4 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295H6327XTSA1 | 连续漏极电流(Id)(25°C 时):1.8A 漏源电压(Vdss):60V 栅源极阈值电压:1.8V @ 400uA 漏源导通电阻:300mΩ @ 1.8A,10V 最大功率耗散(Ta=25°C):1.8W 类型:N沟道 | Infineon(英飞凌) |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295L6327 | SIPMOSï Small-Signal-Transistor | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 448.13 Kbytes | 共8页 |  | 无 |
BSP295L6327HTSA1 | MOSFET N-CH 60V 1.8A SOT-223 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295L6327HTSA1 | MOSFET N-CH 60V 1.8A SOT223-4 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |
BSP295L6327HTSA1 | MOSFET N-CH 60V 1.8A SOT223-4 | Infineon Technologies |  | 442.53 Kbytes | 共8页 |  | 无 |