SeriesOptiMOS™
PackageBulk
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.5A
Rds On (Max) @ Id, Vgs50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds419pF @ 10V
Power - Max500mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device PackagePG-TSOP-6-6