Series-

PackageBulk

FET TypeN-Channel

TechnologyMOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)20 V

Current - Continuous Drain (Id) @ 25°C1.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)-

Rds On (Max) @ Id, Vgs160mOhm @ 1.4A, 2.5V

Vgs(th) (Max) @ Id950mV @ 3.7µA

Gate Charge (Qg) (Max) @ Vgs600 pC @ 2.5 V

Vgs (Max)±8V

Input Capacitance (Ciss) (Max) @ Vds180 pF @ 10 V

FET Feature-

Power Dissipation (Max)500mW (Ta)

Operating Temperature-55°C ~ 150°C (TJ)

Mounting TypeSurface Mount

Supplier Device PackagePG-SOT363-6

Package / Case6-VSSOP, SC-88, SOT-363