晶体管极性：:NPN
Collector Emitter Voltage V(br)ceo：:40V
Transition Frequency ft：:50MHz
功耗：:800mW
DC Collector Current：:1A
DC Current Gain hFE：:250
Operating Temperature Min：:-65°C
Operating Temperature Max：:200°C
Transistor Case Style：:TO-39
No. of Pins：:3
MSL：:-
SVHC：:No SVHC (20-Jun-2013)
Collector Emitter Voltage Vces：:1V
连续集电极电流Ic最大：:1A
Current Ic Continuous a Max：:1A
Current Ic hFE：:100mA
Gain Bandwidth ft Min：:50MHz
Gain Bandwidth ft Typ：:50MHz
Hfe Min：:100
工作温度范围：:-65°C to +200°C
Power Dissipation Ptot Max：:800mW
Voltage Vcbo：:80V
Weight (kg)：0.0024
Tariff No.：85412900