型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
BAR81W | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | SIEMENS[Siemens Semiconductor Group] | ![SIEMENS[Siemens Semiconductor Group]的LOGO](/PdfSupLogo/144SIEMENS.GIF) | 30.64 Kbytes | 共4页 |  | BAR81,BAR80,BAR65-02W,BAR65-03W,BAR65-07,BAR63-W,BAR63-02W,HRB0103A,BAR63-03W,HRB0103B |
BAR81W | Silicon RF Switching Diode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 407.48 Kbytes | 共4页 |  | FMMD6050,HVD142,HSB88YP,BAR81,BAS40W,BAW56,BXY42BA-6,IN4148,HVL133A,HVD131 |
BAR81W | Silicon RF Switching Diode | KEXIN[Guangdong Kexin Industrial Co.,Ltd] | ![KEXIN[Guangdong Kexin Industrial Co.,Ltd]的LOGO](/PdfSupLogo/568KEXIN.GIF) | 36.71 Kbytes | 共1页 |  | RJK6014DPP,SCH2817_07,HRB0103B,RKP301KJ,HSB88YP,HVL144AM,HSS81,HSM83,CPH5870,RKP204KP |
BAR81W | Silicon RF Switching Diode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 75.66 Kbytes | 共6页 |  | 无 |
BAR81W | Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss | TYSEMI[TY Semiconductor Co., Ltd] | ![TYSEMI[TY Semiconductor Co., Ltd]的LOGO](/PdfSupLogo/975TYSEMI.GIF) | 61.08 Kbytes | 共1页 |  | 无 |
BAR81W | Silicon RF Switching Diode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 824.06 Kbytes | 共6页 |  | 无 |
BAR81WE6327BTSA1 | DIODE STANDAR 30V 100MW SOT343-4 | Infineon Technologies |  | 818.45 Kbytes | 共6页 |  | 无 |
BAR81WH6327 | Silicon RF Switching Diode | INFINEON[Infineon Technologies AG] | ![INFINEON[Infineon Technologies AG]的LOGO](/PdfSupLogo/211INFINEON.GIF) | 824.06 Kbytes | 共6页 |  | 无 |
BAR81WH6327XTSA1 | DIODE STANDAR 30V 100MW SOT343-4 | Infineon Technologies |  | 818.45 Kbytes | 共6页 |  | 无 |