型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
AOD609 | Complementary Enhancement Mode Field Effect Transistor | AOSMD[Alpha & Omega Semiconductors] | ![AOSMD[Alpha & Omega Semiconductors]的LOGO](/PdfSupLogo/258AOSMD.GIF) | 254.2 Kbytes | 共7页 |  | AO4620,AO4622,AO4619,AOD608,AO4617,BSS8402DW_1,AON4604,CEM3172,CEM4808,CEM9935A |
AOD609 | Complementary Enhancement Mode Field Effect Transistor | AOSMD[Alpha & Omega Semiconductors] | ![AOSMD[Alpha & Omega Semiconductors]的LOGO](/PdfSupLogo/258AOSMD.GIF) | 275.44 Kbytes | 共9页 |  | 无 |
AOD609 | N- and P-Channel 40 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 1302.69 Kbytes | 共13页 |  | 无 |
AOD609_09 | Complementary Enhancement Mode Field Effect Transistor | AOSMD[Alpha & Omega Semiconductors] | ![AOSMD[Alpha & Omega Semiconductors]的LOGO](/PdfSupLogo/258AOSMD.GIF) | 275.44 Kbytes | 共9页 |  | 无 |
AOD609G | MOSFET N/P-CH TO252-4 | Alpha & Omega Semiconductor Inc. |  | 713.59 Kbytes | 共12页 |  | 无 |
AOD609-MS | 场效应配置:N+P沟道N:VDSS耐压 40V, ID电流 15A, RDS(ON)导通电阻 30mR@VGS 10V(MAX), VGS(th)开启电压 1至2.5V,P:VDSS耐压 -40V, ID电流 -12A, RDS(ON)导通电阻 45mR@VGS -10V(MAX), VGS(th)开启电压 -1.5V至-2.5V | MSKSEMI(美森科) |  | 5.88 Mbytes | 共8页 |  | 无 |