| 销售商 | 型号 | 制造商 | 功能描述 | 价格 |
Digi-Key 得捷电子 | A2T10TE8XPK4NN | Omron Automation and Safety | IPC A2T 10.4 W/800 MHZ CPU | $19,088.30000 |
Digi-Key 得捷电子 | A2T12A F | Astrodyne TDI | PREMIUM PERF SEVERE ENVIRONMENT | $436.50000 |
Digi-Key 得捷电子 | A2T18H100-25SR3 | NXP USA Inc. | FET RF 2CH 65V 1.81GHZ | $258.93256 |
Digi-Key 得捷电子 | A2T18H160-24SR3 | NXP USA Inc. | RF MOSFET LDMOS DL 28V NI780S | $209.95672 |
Digi-Key 得捷电子 | A2T18H410-24SR6 | NXP USA Inc. | IC TRANS RF LDMOS | $530.15547 |
Digi-Key 得捷电子 | A2T18H455W23NR6 | NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | Obsolete |
Digi-Key 得捷电子 | A2T18S162W31SR3 | NXP USA Inc. | IC TRANS RF LDMOS | Obsolete |
Digi-Key 得捷电子 | A2T18S165-12SR3 | NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | $127.54500 |
Digi-Key 得捷电子 | A2T18S166W12SR3 | NXP USA Inc. | FET RF 1.8GHZ 166W NI-780S-2L2 | $129.19500 |
Digi-Key 得捷电子 | A2T18S260W12NR3 | NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | $395.76680 |
Digi-Key 得捷电子 | A2T18S261W12NR3 | NXP USA Inc. | AIRFAST RF POWER LDMOS TRANSISTO | Obsolete |
Mouser 贸泽电子 | A2T1 | Astrodyne TDI | 电源线滤波器 FILTER 1.0 AMP | 1:¥1,322.4955
5:¥1,280.5386
10:¥1,259.4867
25:¥1,207.0773
|
Mouser 贸泽电子 | A2T14H450-23NR6 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1452-1511 MHz, 93 W AVG., 31 V | 1:¥1,010.672
5:¥991.0778
10:¥958.353
25:¥917.7747
|
Mouser 贸泽电子 | A2T16 F | Astrodyne TDI | 电源线滤波器 FILTER 16AMP | 价格未公开 |
Mouser 贸泽电子 | A2T18H100-25SR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V | 250:¥855.1501
|
Mouser 贸泽电子 | A2T18H160-24SR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V | 250:¥693.4019
|
Mouser 贸泽电子 | A2T18H410-24SR6 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 71 W Avg., 28 V | 150:¥1,925.8364
|
Mouser 贸泽电子 | A2T18H450W19SR6 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 89 W Avg., 30 V | 150:¥1,543.3314
|
Mouser 贸泽电子 | A2T18H455W23NR6 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 87 W Avg., 31.5 V | 150:¥1,042.1086
|
Mouser 贸泽电子 | A2T18S160W31GSR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V | 250:¥773.6206
|
Mouser 贸泽电子 | A2T18S160W31SR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V | 250:¥1,160.3631
|
Mouser 贸泽电子 | A2T18S162W31GSR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V | 250:¥768.7842
|
Mouser 贸泽电子 | A2T18S162W31SR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V | 250:¥768.7842
|
Mouser 贸泽电子 | A2T18S165-12SR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 48 W Avg., 28 V | 250:¥637.772
|
Mouser 贸泽电子 | A2T18S166W12SR3 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 38 W Avg., 28 V | 250:¥405.6361
|
Mouser 贸泽电子 | A2T18S260-12SR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg., 28 V | 250:¥773.7788
|
Mouser 贸泽电子 | A2T18S260W12NR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V | 250:¥1,369.2097
|
Mouser 贸泽电子 | A2T18S261W12NR3 | NXP / Freescale | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V | 1:¥624.325
5:¥612.1888
10:¥591.9731
25:¥566.921
|
Mouser 贸泽电子 | A2T18S262W12NR3 | NXP Semiconductors | 射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor 1805-1880 MHz, 56 W Avg., 28 V | 1:¥625.6358
5:¥614.1098
10:¥586.5152
25:¥566.921
|