型号 | 功能描述 | 生产厂商 | 厂商LOGO | PDF大小 | PDF页数 | 下载地址 | 相关型号 |
25N06G | 连续漏极电流(Id)(25°C 时):25A(Tc) 漏源电压(Vdss):60V 栅源极阈值电压:3V @ 250uA 漏源导通电阻:36mΩ @ 10A,10V 最大功率耗散(Ta=25°C):50W(Tc) 类型:N沟道 | PINGWEI(平伟) |  | 631.97 Kbytes | 共8页 |  | 无 |
25N06G-TA3-T | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 179.72 Kbytes | 共6页 |  | 无 |
25N06G-TA3-T | 25A, 60V N-CHANNEL POWER MOSFET | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 186.89 Kbytes | 共6页 |  | 无 |
25N06G-TA3-T | N-Channel 60 V (D-S) MOSFET | VBSEMI[VBsemi Electronics Co.,Ltd] | ![VBSEMI[VBsemi Electronics Co.,Ltd]的LOGO](/PdfSupLogo/1345VBSEMI.GIF) | 2468.3 Kbytes | 共9页 |  | 无 |
25N06G-TN3-R | 25A, 60V N-CHANNEL POWER MOSFET | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 186.89 Kbytes | 共6页 |  | 无 |
25N06G-TN3-T | 25A, 60V N-CHANNEL POWER MOSFET | UTC[Unisonic Technologies] | ![UTC[Unisonic Technologies]的LOGO](/PdfSupLogo/171UTC.GIF) | 186.89 Kbytes | 共6页 |  | 无 |