Current - Continuous Drain (Id) @ 25° C:750mA
Drain to Source Voltage (Vdss):20V
FET Feature:Logic Level Gate
FET Type:MOSFET N-Channel, Metal Oxide
Input Capacitance (Ciss) @ Vds:160pF @ 5V
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Power - Max:400mW
Product Change Notification:View
Rds On (Max) @ Id, Vgs:85 mOhm @ 1A, 4.5V
Supplier Device Package:SOT-23-3
Vgs(th) (Max) @ Id:1V @ 250µA
最大门源电压:±8
最大漏源电压:20
最高工作温度:150
通道模式:Enhancement
标准包装名称:SOT-23
最低工作温度:-55
渠道类型:N
封装:Tape and Reel
最大漏源电阻:85@4.5V
每个芯片的元件数:1
供应商封装形式:SOT-23
最大功率耗散:400
最大连续漏极电流:0.75
引脚数:3
铅形状:Gull-wing